Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors

被引：15

作者：

Chen, KM ^{[1
]}

Huang, GW

Chiu, DY

Huang, HJ

Chang, CY

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

D O I：

10.1063/1.1511815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-frequency noise in boron-doped polycrystalline silicon-germanium (poly-Si1-xGex) resistors at various temperatures is studied. The poly-Si1-xGex films with 0%similar to36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si1-xGex decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model. (C) 2002 American Institute of Physics.

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页码：2578 / 2580

页数：3

相关论文

共 14 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] Low-frequency noise of integrated poly-silicon resistors [J].

Brederlow, R ;

Weber, W ;

Dahl, C ;

Schmitt-Landsiedel, D ;

Thewes, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1180-1187

[3] Doping dependence of low-frequency noise in polycrystalline SiGe film resistors [J].

Chen, XY ;

Salm, C .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :516-518

[4] On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies [J].

Chen, XY ;

Johansen, JA ;

Salm, C ;

van Rheenen, AD .

SOLID-STATE ELECTRONICS, 2001, 45 (11) :1967-1971

[5] Low frequency noise in heavily doped polysilicon thin film resistors [J].

Deen, MJ ;

Rumyantsev, S ;

Orchard-Webb, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :1881-1884

[6] 1/F NOISE IN POLYCRYSTALLINE SILICON RESISTORS [J].

DEGRAAFF, HC ;

HUYBERS, MTM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2504-2507

[7]

King T.-J., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P567, DOI 10.1109/IEDM.1991.235406

[8]

LEE WC, 1998, S VLSI TECH, P190

[9] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].

LU, NCC ;

GERZBERG, L ;

LU, CY ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830

[10] AN ANALYTICAL MODEL FOR 1/F NOISE IN POLYCRYSTALLINE SILICON THIN-FILMS [J].

LUO, MY ;

BOSMAN, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :768-774