On the design of polarization-insensitive semiconductor optical amplifiers

被引：0
|
作者：
Wartak, MS [1 ]
Weetman, P [1 ]
机构：
[1] VTT Elect, FIN-90571 Oulu, Finland
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2002年 / 35卷 / 03期
关键词：
semiconductor optical amplifiers; quantum wells; delta strain;
D O I：
10.1002/mop.10564
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have used the 4 x 4 Luttinger-Kohn Hamiltonian to analyse the presence of delta-strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 mum InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated. (C) 2002 Wiley Periodicals, Inc.
引用
收藏
页码：227 / 230
页数：4
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