Design and optimization of DBR in 980 nm bottom-emitting VCSEL

被引：4
作者：
Li Te [1 ]
Ning YongQiang [1 ]
Hao ErJuan [2 ]
Cui JinJiang [1 ]
Zhang Yan [1 ]
Liu GuangYu [1 ]
Qin Li [1 ]
Liu Yun [1 ]
Wang LiJun [1 ]
Cui DaFu [3 ]
Xu ZuYan [3 ]
机构：
[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Jilin Univ, Changchun 130033, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
来源：
SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES | 2009年 / 52卷 / 07期
基金：
中国国家自然科学基金;
关键词：
VCSEL; DBR; component graded; series resistance; reflectivity; LASER;
D O I：
10.1007/s11432-009-0073-1
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consists of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 mu m and the uniformity doping concentration is 2.5x10(18)cm(-3). Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 mu m and the uniformity doping concentration is 2x10(18)cm(-3). Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05 Omega. According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed, with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consist of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 mu m and the uniformity doping concentration is 2.5x1018cm(-3). Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 mu m and the uniformity doping concentration is 2x1018cm(-3). Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05 Omega.
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页码：1266 / 1271
页数：6
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