OUM nonvolatile semiconductor memory technology overview

被引：0
|
作者：
Hudgens, Stephen J. [1 ]
机构：
[1] Ovonyx Technol Inc, Sunnyvale, CA 94807 USA
来源：
CHALCOGENIDE ALLOYS FOR RECONFIGURABLE ELECTRONICS | 2006年 / 918卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
OUM (TM) (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM), is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs. OUM technology is based on an electrically initiated reversible amorphous to crystalline phase change process in multi-component chalcogenide alloy materials similar to those used in rewriteable optical disks. Fundamental processes in phase-change memory devices, manufacturing technology, and progress towards commercialization of the technology will be reviewed.
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页码：3 / 11
页数：9
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