Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

被引：19
作者：
Zhou, Xiaoliang [1 ]
Shao, Yang [2 ]
Zhang, Letao [2 ]
Xiao, Xiang [2 ]
Han, Dedong [1 ]
Wang, Yi [1 ]
Zhang, Shengdong [1 ,2 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 04期
基金：
美国国家科学基金会;
关键词：
Amorphous oxide semiconductor; thinfilm transistors; oxygen adsorption; surface-state model; OXIDE; ZNO; WATER;
D O I：
10.1109/LED.2017.2666881
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of oxygen adsorption at the back channel of a-IGZO thin-film transistors (TFTs) is investigated. It is shown that for TFTs with the channel layer sputter-deposited at a high O-2/Ar flow rate ratio (R-O/Ar), the threshold voltages in vacuum and O-2 ambient do not show any difference; for devices fabricated at a low R-O/Ar, the threshold voltages in vacuum are lower than those in O-2. In addition, the devices in O-2 show a more significant threshold voltage shift than those in vacuum do under a positive gate bias stress. The surface-state model is used to explain this observation. It is inferred that the oxygen adsorptions are physical and chemical, respectively, in the high- and low-R-O/Ar cases, and the transition from physical to chemical adsorption occurs when a positive gate bias stress is applied.
引用
收藏
页码：465 / 468
页数：4
相关论文
共 32 条
  • [1] Fundamental and practical aspects in the design of nanoscaled SnO2 gas sensors:: a status report
    Barsan, N
    Schweizer-Berberich, M
    Göpel, W
    [J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1999, 365 (04): : 287 - 304
  • [2] Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination
    Chen, T. C.
    Chang, T. C.
    Hsieh, T. Y.
    Tsai, C. T.
    Chen, S. C.
    Lin, C. S.
    Jian, F. Y.
    Tsai, M. Y.
    [J]. THIN SOLID FILMS, 2011, 520 (05) : 1422 - 1426
  • [3] Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors
    Chen, Wei-Tsung
    Lo, Shih-Yi
    Kao, Shih-Chin
    Zan, Hsiao-Wen
    Tsai, Chuang-Chuang
    Lin, Jian-Hong
    Fang, Chun-Hsiang
    Lee, Chung-Chun
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) : 1552 - 1554
  • [4] Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
    Chen, Yu-Chun
    Chang, Ting-Chang
    Li, Hung-Wei
    Chen, Shih-Ching
    Lu, Jin
    Chung, Wan-Fang
    Tai, Ya-Hsiang
    Tseng, Tseung-Yuen
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (26)
  • [5] Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors
    Chiang, Hai Q.
    McFarlane, Brian R.
    Hong, David
    Presley, Rick E.
    Wager, John F.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2826 - 2830
  • [6] H2O-Assisted O2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
    Chung, Wan-Fang
    Chang, Ting-Chang
    Li, Hung-Wei
    Chen, Shih-Ching
    Chen, Yu-Chun
    Tseng, Tseung-Yuen
    Tai, Ya-Hsiang
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (06) : H235 - H237
  • [7] Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors
    Conley, John F., Jr.
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (04) : 460 - 475
  • [8] Water as Origin of Hysteresis in Zinc Tin Oxide Thin-Film Transistors
    Fakhri, M.
    Johann, H.
    Goerrn, P.
    Riedl, T.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (09) : 4453 - 4456
  • [9] ZnO nanowire field-effect transistor and oxygen sensing property
    Fan, ZY
    Wang, DW
    Chang, PC
    Tseng, WY
    Lu, JG
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (24) : 5923 - 5925
  • [10] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
    Fortunato, E.
    Barquinha, P.
    Martins, R.
    [J]. ADVANCED MATERIALS, 2012, 24 (22) : 2945 - 2986
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