Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

被引：19

作者：

Zhou, Xiaoliang ^{[1
]}

Shao, Yang ^{[2
]}

Zhang, Letao ^{[2
]}

Xiao, Xiang ^{[2
]}

Han, Dedong ^{[1
]}

Wang, Yi ^{[1
]}

Zhang, Shengdong ^{[1
,2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 04期

基金：

美国国家科学基金会;

关键词：

Amorphous oxide semiconductor; thinfilm transistors; oxygen adsorption; surface-state model; OXIDE; ZNO; WATER;

D O I：

10.1109/LED.2017.2666881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of oxygen adsorption at the back channel of a-IGZO thin-film transistors (TFTs) is investigated. It is shown that for TFTs with the channel layer sputter-deposited at a high O-2/Ar flow rate ratio (R-O/Ar), the threshold voltages in vacuum and O-2 ambient do not show any difference; for devices fabricated at a low R-O/Ar, the threshold voltages in vacuum are lower than those in O-2. In addition, the devices in O-2 show a more significant threshold voltage shift than those in vacuum do under a positive gate bias stress. The surface-state model is used to explain this observation. It is inferred that the oxygen adsorptions are physical and chemical, respectively, in the high- and low-R-O/Ar cases, and the transition from physical to chemical adsorption occurs when a positive gate bias stress is applied.

引用

页码：465 / 468

页数：4

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