Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors

被引：30

作者：

Wang, Yu-Lin ^{[2
]}

Chu, B. H. ^{[1
]}

Chen, K. H. ^{[1
]}

Chang, C. Y. ^{[1
]}

Lele, T. P. ^{[1
]}

Papadi, G. ^{[3
]}

Coleman, J. K. ^{[3
]}

Sheppard, B. J. ^{[3
]}

Dungen, C. F. ^{[4
]}

Pearton, S. J. ^{[2
]}

Johnson, J. W. ^{[5
]}

Rajagopal, P. ^{[5
]}

Roberts, J. C. ^{[5
]}

Piner, E. L. ^{[5
]}

Linthicum, K. J. ^{[5
]}

Ren, F. ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Infect Dis & Pathol, Gainesville, FL 32611 USA

[4] Maryland Dept Nat Resources, Cooperat Oxford Lab, Oxford, MD 21654 USA

[5] Nitronex Corp, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

关键词：

aluminium compounds; biosensors; gallium compounds; high electron mobility transistors; III-V semiconductors; wide band gap semiconductors; GAN SURFACES; OYSTERS; RANGE; HEMTS;

D O I：

10.1063/1.3153130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect Perkinsus marinus. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 s when the infected solution was added to the antibody-immobilized surface. The sensor can be recycled with a phosphate buffered saline wash. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN/GaN HEMTs for Perkinsus marinus detection.

引用

页数：3

共 31 条

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