A Novel Enhancement-Mode AlGaN/GaN HFET with Double-Barrier Gates-Separating Groove

被引：0
作者：
Fu, Xingchang
Lv, Yuanjie
Zhang, Lijiang
Li, Xianjie
Zhang, Tong [1 ]
机构：
[1] Southeast Univ, Sch Elect Sci & Engn, Joint Int Res Lab Informat Display & Visualizat, Nanjing, Jiangsu, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN; HFET; enhancement mode; subthreshold slope; breakdown voltage; POWER;
D O I：
10.1109/edssc.2019.8754371
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a novel enhancement-mode AlGaN/GaN double-barrier gates-separating groove heterostructure field-effect transistor (DB-GSG HFET) is proposed, in which two block harriers exist among the three gates as realized by dry etching. Because of the shielding effect of drain-side block barrier on drain voltage, the source-side block barrier is almost unaffected by drain voltage in the DB-GSG HFET. As a result, the electrical characteristics of the DB-GSG HEFT are improved obviously, compared with the gates-separating groove (GSG) HFET which has only one single block harrier between double gates.
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页数：2
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