Dynamic avalanche in Si power diodes and impact ionization at the nn+ junction

被引：13
作者：
Domeij, M
Breitholtz, B
Lutz, J
Östling, M
机构：
[1] KTH, Dept Elect, S-16440 Kista, Sweden
[2] ABB Corp Res, S-72178 Vasteras, Sweden
[3] SEMIKRON Elekt GmbH, D-90431 Nurnberg, Germany
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 03期
关键词：
D O I：
10.1016/S0038-1101(99)00261-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The reverse recovery failure limit was measured with an optical technique for power diodes which sustain high levels of dynamic avalanche. Measurements and simulations indicate that these diodes withstand dynamic avalanche at the pn-junction and eventually fail as a result of a strongly inhomogeneous current distribution caused by the onset of impact ionisation at the diode nn(+) junction - a mechanism similar to the reverse bias second breakdown of bipolar transistors. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：477 / 485
页数：9
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