Site-Selective Quantum Control in an Isotopically Enriched 28Si/Si0.7Ge0.3 Quadruple Quantum Dot

被引：52

作者：

Sigillito, A. J. ^{[1
]}

Loy, J. C. ^{[1
]}

Zajac, D. M. ^{[1
]}

Gullans, M. J. ^{[1
]}

Edge, L. F. ^{[2
]}

Petta, J. R. ^{[1
]}

机构：

[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[2] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

来源：

PHYSICAL REVIEW APPLIED | 2019年 / 11卷 / 06期

基金：

美国国家科学基金会;

关键词：

ELECTRON SPIN-RESONANCE; QUBIT; NOISE;

D O I：

10.1103/PhysRevApplied.11.061006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon spin qubits are a promising quantum-computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device-fabrication techniques. In recent years, high-fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here we demonstrate coherent spin control in a quadruple quantum dot fabricated from isotopically enriched Si-28. We tune the ground-state charge configuration of the quadruple dot down to the single-electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved with the use of electric dipole spin resonance in a magnetic field gradient. We execute a resonant controlled-NOT gate between two adjacent spins in 270 ns.

引用

页数：6