Site-Selective Quantum Control in an Isotopically Enriched 28Si/Si0.7Ge0.3 Quadruple Quantum Dot

被引:52
|
作者
Sigillito, A. J. [1 ]
Loy, J. C. [1 ]
Zajac, D. M. [1 ]
Gullans, M. J. [1 ]
Edge, L. F. [2 ]
Petta, J. R. [1 ]
机构
[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[2] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA
基金
美国国家科学基金会;
关键词
ELECTRON SPIN-RESONANCE; QUBIT; NOISE;
D O I
10.1103/PhysRevApplied.11.061006
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon spin qubits are a promising quantum-computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device-fabrication techniques. In recent years, high-fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here we demonstrate coherent spin control in a quadruple quantum dot fabricated from isotopically enriched Si-28. We tune the ground-state charge configuration of the quadruple dot down to the single-electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved with the use of electric dipole spin resonance in a magnetic field gradient. We execute a resonant controlled-NOT gate between two adjacent spins in 270 ns.
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页数:6
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