Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

被引：34

作者：

Blokhin, Sergey A. ^{[1
]}

Maleev, Nikolai A.

Kuzmenkov, Alexander G.

Sakharov, Alexey V.

Kulagina, Marina M.

Shernyakov, Yuri M.

Novikov, Innokenty I.

Maximov, Mikhail V.

Ustinov, Victor M.

Kovsh, Alexey R.

Mikhrin, Sergey S.

Ledentsov, Nikolai N.

Lin, Gray

Chi, Jim Y.

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci Res & Educ, St Petersburg Physicotech Ctr, St Petersburg 194021, Russia

[3] NL Nanosemicond GmbH, D-42263 Dortmund, Germany

[4] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 9-10期

关键词：

distributed Bragg reflector (DBR); internal optical losses; quantum dot (QD); single-mode; thermal resistance; vertical-cavity surface-emitting laser (VCSEL);

D O I：

10.1109/JQE.2006.880125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxy-grown 0.98-mu m vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-xAs-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 mu m. Devices with 3-mu m tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

引用

页码：851 / 858

页数：8

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