Photoluminescence and electron paramagnetic resonance studies of bulk GaN doped with gadolinium

被引：13

作者：

Lipinska, Z.

Pawlowski, M.

Zolnierowicz, H.

Wysmolek, A.

Palczewska, M.

Kaminska, M.

Twardowski, A.

Bockowski, M.

Grzegory, I.

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2006年 / 110卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.110.243

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence and electron paxamagnetic resonance experiments on strain free GaN bulk crystals of wurtzite structure doped with gadolinium are reported. Efficient gettering of residual GaN donors by Gd was observed. Electron paramagnetic resonance showed that Gd ion incorporated into GaN lattice had Gd3+(4f(7)) configuration. The observed photoluminescence spectra were explained as due to intracenter Gd3+ (4f(7)) transitions. No ferromagnetic behavior was detected.

引用

页码：243 / 248

页数：6

共 8 条

[1]

ABRAGAM A, 1970, ELECT PARAMAGNETIC R, P335

[2] Colossal magnetic moment of Gd in GaN [J].