Enhancement of Near-Infrared Phosphor Luminescence Properties via Construction of Stable and Compact Energy Transfer Paths

被引:40
|
作者
Wei, Guohui [1 ]
Wang, Zhijun [1 ]
Li, Rui [1 ]
Wang, Ye [1 ]
Li, Jiehong [1 ]
Shi, Yawei [1 ]
He, Shaoxuan [1 ]
Yang, Yuanbo [1 ]
Yang, Zhiping [1 ]
Li, Panlai [1 ]
机构
[1] Hebei Univ, Hebei Key Lab Opt Elect Informat & Mat, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
基金
中国国家自然科学基金;
关键词
energy transfer; luminescence; near-infrared light-emitting diodes; phosphor; MECHANICAL-PROPERTIES; TUNABLE LUMINESCENCE;
D O I
10.1002/adom.202201076
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The rapid development of near-infrared (NIR) spectroscopy urgently requires the exploration of NIR-emitting phosphors with excellent luminescence properties. Herein, GaTaO4:Cr3+,Yb3+ NIR phosphor with excellent luminescence properties is reported, which exhibits ultra-broadband NIR emission with a full width at half maximum of 300 nm, good thermal stability of 90%@423 K, and most remarkably, high internal quantum efficiency of 95.5% and external quantum efficiency of 44.79%. Such outstanding luminescence properties mainly give the credit to the unique sandwiched structure of GaTaO4:Cr3+,Yb3+, in which layers of Yb3+ ions (activator) are sandwiched between layers of Cr3+ ions (sensitizer), and hence many stable and compact Cr-Yb pairs are formed, so that the energy can be rapidly transferred from Cr3+ to Yb3+, effectively activating the characteristic f-f transition of Yb3+ that is very stable and almost independent of the temperature, and at the same time, the non-radiative transition of Cr3+ ions can be suppressed to a certain degree. The NIR phosphor-converted light-emitting diodes (pc-LEDs) are fabricated by combining GaTaO4:Cr3+,Yb3+ with blue LED chips, and the application potential is fully demonstrated by non-destructive food detection, night vision, and vein display. The results provide novel prospects for the design of NIR-emitting materials with desirable luminescent properties.
引用
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页数:8
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