Efficient overall water splitting over Mn doped Ni2P microflowers grown on nickel foam

被引:34
|
作者
Xu, Peiman [1 ]
Qiu, Lijun [1 ]
Wei, Licheng [1 ]
Liu, Yiyi [1 ]
Yuan, Dingsheng [1 ]
Wang, Yi [2 ]
Tsiakaras, Panagiotis [3 ,4 ,5 ]
机构
[1] Jinan Univ, Sch Chem & Mat Sci, Guangzhou 510632, Peoples R China
[2] Sun Yat Sen Univ, Sch Chem Engn & Technol, Key Lab Low Carbon Chem & Energy Conservat Guangd, Zhuhai 519082, Peoples R China
[3] Inst High Temp Electrochem RAS, Lab Electrochem Devices Based Solid Oxide Proton, Ekaterinburg 620990, Russia
[4] Ural Fed Univ, Lab Mat & Devices Clean Energy, 19 Mira Str, Ekaterinburg 620002, Russia
[5] Univ Thessaly, Sch Engn, Dept MechanicalEngn, Lab Alternat Energy Convers Syst, Volos 38334, Volos, Greece
基金
中国国家自然科学基金;
关键词
Electrocatalysts; Hydrogen evolution reaction; Oxygen evolution reaction microflower structure; HYDROGEN EVOLUTION REACTION; BIFUNCTIONAL ELECTROCATALYSTS; HIGH-PERFORMANCE; NANOSHEET ARRAYS; HIGHLY EFFICIENT; OXYGEN; ALKALINE; PHOSPHIDE; ELECTRODE; NANOPARTICLES;
D O I
10.1016/j.cattod.2019.04.019
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The efficient design of highly active, economical and stable electrocatalysts for both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in alkaline electrolyte still remains a great challenge. Herein, Mn doped Ni2P microflowers with porous feature directly grown on Ni foam have been successfully synthesized via a facile hydrothermal method and phosphorization treatment. By detailed analyzing X-ray photoelectron spectroscopy results, it can be found that the electronic structure of Ni2P can be efficiently regulated by Mn doping. As expected, the Mn-doped Ni2P microflowers with an optimal Mn/Ni ratio of 0.053 exhibit a low overpotential of 205 mV for HER and 330 mV for OER to achieve a current density of 100 mA cm(-2) in 1.0M KOH solution. Furthermore, when this electrocatalyst is adopted as both the cathode and anode for overall water splitting, a current density of 10 mA cm(-2) is achieved at a cell voltage as low as 1.58 V, accompanied with high stability.
引用
收藏
页码:815 / 821
页数:7
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