Ordering and self-organized growth of Si in the Si/SiO2 superlattice system

被引:8
|
作者
Lockwood, DJ
Grom, GF
Fauchet, PM
Tsybeskov, L
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Univ Rochester, Dept Elect & Comp Engn, Nanoscale Silicon Res Initiat, Rochester, NY 14618 USA
基金
美国国家科学基金会;
关键词
crystal morphology; nanostructures; recrystallization; superlattices; semiconducting silicon;
D O I
10.1016/S0022-0248(01)02213-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have observed self-organization in Si nanocrystals fabricated by high temperature annealing of nanometer-thick layers of amorphous Si confined between thin SiO2 layers. Silicon nanoparticles larger than similar to 8 nm spontaneously form brick-shaped crystallites oriented along the [1 1 1] direction while smaller nanocrystals adopt a more spherical geometry. The observed ordering and self-organization are important steps towards reproducible maskless Si nanofabrication and the consequent consruction of Si/SiO2 quantum devices. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1898 / 1903
页数:6
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