Persistent conductive footprints of 109° domain walls in bismuth ferrite films

被引:57
作者
Stolichnov, I. [1 ]
Iwanowska, M. [1 ]
Colla, E. [1 ]
Ziegler, B. [2 ]
Gaponenko, I. [2 ]
Paruch, P. [2 ]
Huijben, M. [3 ,4 ]
Rijnders, G. [3 ,4 ]
Setter, N. [1 ]
机构
[1] EPFL Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] Univ Geneva, DPMC MaNEP, CH-1211 Geneva 4, Switzerland
[3] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
[4] Univ Twente, MESA, Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
基金
瑞士国家科学基金会;
关键词
THIN-FILMS; BIFEO3;
D O I
10.1063/1.4869851
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109 degrees domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall "footprints" is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
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