Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

被引：71

作者：

Zhang, Zi-Hui ^{[1
]}

Chen, Sung-Wen Huang ^{[2
,3
]}

Chu, Chunshuang ^{[1
]}

Tian, Kangkai ^{[1
]}

Fang, Mengqian ^{[1
]}

Zhang, Yonghui ^{[1
]}

Bi, Wengang ^{[1
]}

Kuo, Hao-Chung ^{[2
,3
]}

机构：

[1] Hebei Univ Technol, Sch Elect & Informat Engn, Key Lab Elect Mat & Devices Tianjin, Inst Micronano Photoelect & Electmagnet Technol I, 5340 Xiping Rd, Tianjin 300401, Peoples R China

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electopt Engn, Hsinchu 30010, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2018年 / 13卷

基金：

中国国家自然科学基金;

关键词：

DUV LED; Superlattice p-EBL; Hole injection; Electron leakage; Efficiency-droop-free; SUBSTRATE; SI;

D O I：

10.1186/s11671-018-2539-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

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页数：7

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