Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

被引：3

作者：

Harmatha, Ladislav ^{[1
]}

Stuchlikova, Lubica ^{[1
]}

Racko, Juraj ^{[1
]}

Marek, Juraj ^{[1
]}

Pechacek, Juraj ^{[1
]}

Benko, Peter ^{[1
]}

Nemec, Michal ^{[1
]}

Breza, Juraj ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Bratislava 81219, Slovakia

来源：

APPLIED SURFACE SCIENCE | 2014年 / 312卷

关键词：

Schottky contact; GaN/AlGaN/GaN heterostructure; Capacitance analysis; DLTS method; Simulation; GAN FILMS; BARRIER;

D O I：

10.1016/j.apsusc.2014.05.097

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The paper presents the results of capacitance measurements on GaN/AlGaNIGaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance-voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/A10.2GaN0.8/GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：102 / 106

页数：5

共 16 条

[1] [Anonymous], 1967, PHYS TECHNOLOGY SEMI
[2] [Anonymous], 2010, SENT DEV SYNOPSYS US
[3] Characterization and analysis of trap-related effects in AlGaN-GaNHEMTs
Faqir, M.
Verzellesi, G.
Fantini, F.
Danesin, F.
Rampazzo, F.
Meneghesso, G.
Zanoni, E.
Cavallini, A.
Castaldini, A.
Labat, N.
Touboul, A.
Dua, C.
[J]. MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1639 - 1642
[4] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION
FOYT, AG
DONNELLY, JP
LINDLEY, WT
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (12) : 372 - &
[5] Gurnik P., 1997, Journal of Electrical Engineering, V48, P52
[6] Harmatha L, 2001, PHYS STATUS SOLIDI A, V183, P391, DOI 10.1002/1521-396X(200102)183:2<391::AID-PSSA391>3.0.CO
[7] 2-N
[8] AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation
Lalinsky, T.
Vanko, G.
Vallo, M.
Dobrocka, E.
Ryger, I.
Vincze, A.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (09)
[9] Lee L, 2002, CHINESE J PHYS, V40, P424
[10] Marek J., 2010, ASDAM 2010 8 INT C A, P143

← 1 2 →