Electron field emission from thin fine-grained CVD diamond films

被引：75
作者：
Lacher, F
Wild, C
Behr, D
Koidl, P
机构：
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 09期
关键词：
boron; electron held emission; growth conditions; emission sites; transient behaviour;
D O I：
10.1016/S0925-9635(97)00020-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The held emission properties of thin, fine-grained diamond films were investigated by measuring emission currents versus electric field curves. The measurements were performed with a spherical electrode attached to a piezoelectric positioning system. The lateral distribution was analyzed by accelerating emitted electrons onto a fluorescent screen. In addition the transient behavior of the emission current was investigated. These characterization techniques were applied to a large number of CVD diamond films deposited by microwave plasma-assisted CVD. The samples were prepared with various methane concentrations (0.5-7%) and deposition temperatures (700-900 degrees C). Undoped as well as boron-and nitrogen-doped samples were studied. Under optimized conditions threshold field strengths as low as 2 V/mu m were realized, yielding current densities in the range of several mA/cm(2) at 5 V/mu m. The density of emission sites is on the order of 10(4) sites/cm(2). (C) 1997 Elsevier Science S.A.
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页码：1111 / 1116
页数：6
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