Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

被引：39

作者：

Chiu, Hsien-Chin ^{[1
]}

Yang, Chih-Wei ^{[1
]}

Wang, Hsiang-Chun ^{[1
]}

Huang, Fan-Hsiu ^{[1
]}

Kao, Hsuan-Ling ^{[1
]}

Chien, Feng-Tso ^{[2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Tao Yuan 407, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 11期

关键词：

Field plate; GaN; high-electron-mobility transistor; low-frequency noise; LOW-FREQUENCY NOISE; FLICKER-NOISE; EDGE TERMINATION; DEEP-LEVELS; SUBSTRATE;

D O I：

10.1109/TED.2013.2281911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high-electron-mobility transistors (HEMTs) with various field-plate (FP) and gate-to-drain distance extensions are fabricated and investigated. Experiments are carried out on 20 transistors. Their ON-state resistance (R-ON), OFF-state breakdown voltage (V-BR), RF performance, and low-frequency noise are measured and studied. The FP extension is found to significantly improve the OFF-state breakdown voltage. However, the FP extension obviously weakens the frequency response and power added efficiency performance, because it increases the feedback C-gd. The FP extension is beneficial to the reduction of the electric field intensity at the gate edge of the device and reduces the probability of the injection of electrons into traps, resulting in the reduction of low-frequency noise.

引用

收藏

页码：3877 / 3882

页数：6

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