A WSe2/MoSe2 heterostructure photovoltaic device

被引：141

作者：

Floery, Nikolaus ^{[1
]}

Jain, Achint ^{[1
]}

Bharadwaj, Palash ^{[1
]}

Parzefall, Markus ^{[1
]}

Taniguchi, Takashi ^{[2
]}

Watanabe, Kenji ^{[2
]}

Novotny, Lukas ^{[1
]}

机构：

[1] ETH, Photon Lab, CH-8092 Zurich, Switzerland

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 12期

基金：

瑞士国家科学基金会;

关键词：

WAALS; GROWTH;

D O I：

10.1063/1.4931621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the photovoltaic effect in a WSe2/MoSe2 heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10(4). Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe2/MoS2 heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory. (C) 2015 AIP Publishing LLC.

引用

页数：4

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