Experimental and theoretical studies of phonons in hexagonal InN

被引:250
作者
Davydov, VY [1 ]
Emtsev, VV
Goncharuk, IN
Smirnov, AN
Petrikov, VD
Mamutin, VV
Vekshin, VA
Ivanov, SV
Smirnov, MB
Inushima, T
机构
[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Silicate Chem, St Petersburg 199155, Russia
[3] Tokai Univ, Hiratsuka, Kanagawa 2591292, Japan
关键词
D O I
10.1063/1.125330
中图分类号
O59 [应用物理学];
学科分类号
摘要
The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (<1(1)over bar>02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E-2(low) at 87 cm(-1), E-2(high) at 488 cm(-1), A(1)(TO) at 447 cm(-1), E-1(TO) at 476 cm(-1), A(1)(LO) at 586 cm(-1), and E-1(LO) at 593 cm(-1). The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be epsilon(perpendicular to 0)/epsilon(parallel to 0)=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K. (C) 1999 American Institute of Physics. [S0003-6951(99)01947-6].
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页码:3297 / 3299
页数:3
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