Progress of Be-Based II-VI Green to Yellow Laser Diodes

被引：0

作者：

Tanaka, S. ^{[1
]}

Kasai, J. ^{[1
]}

Fujisaki, S. ^{[1
]}

Tsuji, S. ^{[1
]}

Akimoto, R. ^{[2
]}

Hasama, T. ^{[2
]}

Ishikawa, H. ^{[2
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

[2] AIST, Tsukuba, Ibaraki, Japan

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Be-based II-VI semiconductors can be expected as a laser material with longer lifetimes than conventional ZnSe-based II-VI semiconductors. Continuous-wave operation in green-to-yellow spectral region was demonstrated with BeZnCdSe quantum-well laser diodes. The lasing wavelength of the fabricated green and yellow laser diode was 543 nm and 571 nm, respectively. Light output power over 50 mw has been confirmed with a low threshold current density.

引用

页数：2

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