High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces

被引：4

作者：

Aoki, Toshichika ^{[1
]}

Wakayama, Hisashi ^{[1
]}

Kaneda, Naoki ^{[2
]}

Mishima, Tomoyoshi ^{[2
]}

Nomoto, Kazuki ^{[3
]}

Shiojima, Kenji ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Elect & Elect Engn, Fukui 9108507, Japan

[2] Hitachi Cable Ltd, Corp Adv Technol Grp, Res & Dev Lab, Tsuchiura, Ibaraki 3000026, Japan

[3] Univ Notre Dame, Notre Dame, IN 46556 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 11期

关键词：

OHMIC CONTACTS; N-GAN; SCHOTTKY BARRIERS; V CHARACTERISTICS; METAL CONTACTS; LOW-RESISTANCE; I-V;

D O I：

10.7567/JJAP.52.11NH03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the inductively coupled plasma (ICP) etching damage on the electrical characteristics of low-Mg-doped p-GaN Schottky contacts were evaluated by high-temperature isothermal capacitance transient spectroscopy. A large single peak for an acceptor-type surface state was dominantly detected for as-grown samples. The energy level and state density were obtained to be 1.18 eV above the valence band, which is close to a Ga vacancy (V-Ga), and 1.5 x 10(13) cm(-2), respectively. It was speculated that a small portion of Ga atoms were missing from the surface, and a high V-Ga density was observed in a few surface layers. The peak intensity decreased by 60% upon annealing at 800 degrees C, and further decrease was found by ICP etching. This decrease is consistent with the suppression of the memory effect in current-voltage characteristics. Upon annealing and ICP etching, since the V-Ga structure might be disordered, the peak intensity decreased. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 31 条

[1] Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films [J].

Arehart, A. R. ;

Corrion, A. ;

Poblenz, C. ;

Speck, J. S. ;

Mishra, U. K. ;

DenBaars, S. P. ;

Ringel, S. A. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :1750-+

[2] Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy [J].

Arehart, A. R. ;

Corrion, A. ;

Poblenz, C. ;

Speck, J. S. ;

Mishra, U. K. ;

Ringel, S. A. .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[3] Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy [J].

Armstrong, A. ;

Caudill, J. ;

Corrion, A. ;

Poblenz, C. ;

Mishra, U. K. ;

Speck, J. S. ;

Ringel, S. A. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)

[4] Depth and thermal stability of dry etch damage in GaN Schottky diodes [J].

Cao, XA ;

Cho, H ;

Pearton, SJ ;

Dang, GT ;

Zhang, AP ;

Ren, F ;

Shul, RJ ;

Zhang, L ;

Hickman, R ;

Van Hove, JM .

APPLIED PHYSICS LETTERS, 1999, 75 (02) :232-234

[5] Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations [J].

Fang, CY ;

Huang, WJ ;

Chang, EY ;

Lin, CF ;

Feng, MS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (7A) :4207-4212

[6] I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts [J].

Fukushima, Yoshihiro ;

Ogisu, Keita ;

Kuzuhara, Masaaki ;

Shiojima, Kenji .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 :S856-S859

[7]

Gotz W, 1996, APPL PHYS LETT, V68, P3470, DOI 10.1063/1.116075

[8] Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces [J].

Hashizume, T ;

Nakasaki, R .

APPLIED PHYSICS LETTERS, 2002, 80 (24) :4564-4566

[9] Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy [J].

Hierro, A ;

Arehart, AR ;

Heying, B ;

Hansen, M ;

Mishra, UK ;

DenBaars, SP ;

Speck, JS ;

Ringel, SA .

APPLIED PHYSICS LETTERS, 2002, 80 (05) :805-807

[10] Hydrogen passivation of deep levels in n-GaN [J].

Hierro, A ;

Ringel, SA ;

Hansen, M ;

Speck, JS ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2000, 77 (10) :1499-1501

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