Planar nanowire transistors from two-dimensional materials

被引：1
作者：
Haehnlein, B. [1 ,2 ]
Alsioufy, M. A. [1 ,2 ]
Lootze, M. [1 ,2 ]
Jacobs, H. O. [1 ]
Schwierz, F. [2 ]
Pezoldt, J. [1 ]
机构：
[1] Tech Univ Ilmenau, Inst Mikro & Nano Technol MacroNano, FG Nanotechnol, D-98684 Ilmenau, Germany
[2] Tech Univ Ilmenau, Inst Mikro & Nano Technol MacroNano, FG Festkorperelekt, D-98684 Ilmenau, Germany
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2016年 / 42卷
关键词：
Transistor; Transconductance; Side gate; Back gate; Two dimensional materials; Graphene; Molybdenum disulfide; Silicon carbide; MOS2; TRANSISTORS; HIGH-PERFORMANCE; SINGLE-LAYER; GRAPHENE; ELECTRONICS; TRANSITION; PROSPECTS;
D O I：
10.1016/j.mssp.2015.07.068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, side gate transistors based on graphene and molybdenum disulfide in comparison to their respective top or back gated devices are presented. The graphene devices were fabricated based on an all carbon technology on silicon carbide substrates, whereas the molybdenum disulfide transistors were fabricated using the exfoliation technique. The output characteristics are analyzed in terms of trans-conductance in dependence on the geometrical device properties for each material. It is shown that side gate transistors are able to reach the transconductances of conventional top-gate MOSFETs and that this type of transistor can be used as a simple tool for material properties characterization. (C) 2015 Elsevier Ltd. All rights reserved.
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收藏
页码：183 / 187
页数：5
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