Low temperature GaAs/Si direct wafer bonding

被引：29

作者：

Alexe, M ^{[1
]}

Dragoi, V ^{[1
]}

Reiche, M ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 07期

关键词：

D O I：

10.1049/el:20000507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-Si low temperature bonding fas been achieved using spin-on-glass as the intermediate layer. Interface energies of similar to 1.7J/m(2) were obtained after thermal annealing at only 200 degrees C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5-10 mu m.

引用

页码：677 / 678

页数：2

共 14 条

[1]

BENGTSSON S, 1992, J ELECTRON MATER, V21, P841

[2]

Eaton W. P., 1992, Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, P146

[3] IMPROVED GEOMETRY OF DOUBLE-SIDED POLISHED PARALLEL WAFERS PREPARED FOR DIRECT WAFER BONDING [J].

HAISMA, J ;

VANDERKRUIS, FJHM ;

SPIERINGS, BACM ;

BAALBERGEN, JJ ;

BIJSTERVELD, BH ;

BREHM, R ;

FAASEN, JHPM ;

GROENEN, JJC ;

DEHAAS, PW ;

HADDEMAN, TBJ ;

MICHIELSEN, TM ;

VIJFVINKEL, J .

APPLIED OPTICS, 1994, 33 (34) :7945-7954

[4] Development of a glass-bonded compliant substrate [J].

Hansen, DM ;

Moran, PD ;

Dunn, KA ;

Babcock, SE ;

Matyi, RJ ;

Kuech, TF .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :144-150

[5] Transfer of 3 in GaAs film on silicon substrate by proton implantation process [J].

Jalaguier, E ;

Aspar, B ;

Pocas, S ;

Michaud, JF ;

Zussy, M ;

Papon, AM ;

Bruel, M .

ELECTRONICS LETTERS, 1998, 34 (04) :408-409

[6] CHARACTERIZATION OF THIN ALGAAS/INGAAS/GAAS QUANTUM-WELL STRUCTURES BONDED DIRECTLY TO SIO2/SI AND GLASS SUBSTRATES [J].

KLEM, JF ;

JONES, ED ;

MYERS, DR ;

LOTT, JA .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :459-462

[7] Materials integration of gallium arsenide and silicon by wafer bonding [J].

Kopperschmidt, P ;

Senz, S ;

Kastner, G ;

Hesse, D ;

Gosele, UM .

APPLIED PHYSICS LETTERS, 1998, 72 (24) :3181-3183

[8] BUBBLE-FREE WAFER BONDING OF GAAS AND INP ON SILICON IN A MICROCLEANROOM [J].

LEHMANN, V ;

MITANI, K ;

STENGL, R ;

MII, T ;

GOSELE, U .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2141-L2143

[9] Preparation of silicon-on-gallium arsenide wafers for monolithic optoelectronic integration [J].

London, JM ;

Loomis, AH ;

Ahadian, JF ;

Fonstad, CG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :958-960

[10] CHARACTERIZATION OF AN INDIVIDUAL SI THIN-LAYER BURIED IN GAAS (001) USING RAMAN-SPECTROSCOPY [J].

TANINO, H ;

AMANO, S ;

KAWANAMI, H ;

MATSUHATA, H .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) :7068-7072

← 1 2 →