Low temperature GaAs/Si direct wafer bonding

被引：29

作者：

Alexe, M ^{[1
]}

Dragoi, V ^{[1
]}

Reiche, M ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 07期

关键词：

D O I：

10.1049/el:20000507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-Si low temperature bonding fas been achieved using spin-on-glass as the intermediate layer. Interface energies of similar to 1.7J/m(2) were obtained after thermal annealing at only 200 degrees C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5-10 mu m.

引用

页码：677 / 678

页数：2

共 50 条

[1] Low temperature direct wafer bonding of GaAs to Si via plasma activation
Yeo, C. Y.
Xu, D. W.
Yoon, S. F.
Fitzgerald, E. A.
APPLIED PHYSICS LETTERS, 2013, 102 (05)
[2] Low-temperature direct wafer bonding of GaAs/InP
Xie, Sheng
Chen, Songyan
Guo, Weilian
Mao, Whong
SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (02) : 47 - 53
[3] Low temperature Si-Si and GaAs-Si direct wafer bonding using spin-on glass intermediate layer
Dragoi, V
Alexe, M
Reiche, M
SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS V, PROCEEDINGS, 2001, 99 (35): : 80 - 84
[4] Low temperature Si/Si wafer direct bonding using a plasma activated method
Li, Dong-ling
Shang, Zheng-guo
Wang, Sheng-qiang
Wen, Zhi-yu
JOURNAL OF ZHEJIANG UNIVERSITY-SCIENCE C-COMPUTERS & ELECTRONICS, 2013, 14 (04): : 244 - 251
[5] Low temperature Si/Si wafer direct bonding using a plasma activated method
Dong-ling LI
Zheng-guo SHANG
Sheng-qiang WANG
Zhi-yu WEN
Journal of Zhejiang University-Science C(Computers & Electronics), 2013, 14 (04) : 244 - 251
[6] Low temperature Si/Si wafer direct bonding using a plasma activated method
Dong-ling Li
Zheng-guo Shang
Sheng-qiang Wang
Zhi-yu Wen
Journal of Zhejiang University SCIENCE C, 2013, 14 : 244 - 251
[7] Room temperature GaAs-Si and InP-Si wafer direct bonding by the surface activated bonding method
Chung, TR
Yang, L
Hosoda, N
Suga, T
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4): : 203 - 206
[8] Room temperature GaAs-Si and InP-Si wafer direct bonding by the surface activated bonding method
The Univ of Tokyo, Tokyo, Japan
Nucl Instrum Methods Phys Res Sect B, 1-4 (203-206):
[9] Room temperature Si/Si wafer direct bonding in air
Wang, Chenxi
Higurashi, Eiji
Suga, Tadatomo
ICEPT: 2007 8TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS, 2007, : 552 - +
[10] Low temperature InP/Si wafer bonding
Tong, QY
Gan, Q
Hudson, G
Fountain, G
Enquist, P
APPLIED PHYSICS LETTERS, 2004, 84 (05) : 732 - 734

← 1 2 3 4 5 →