Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

被引：19

作者：

Chen, Hong-Chih ^{[1
]}

Chang, Ting-Chang ^{[2
]}

Lai, Wei-Chih ^{[1
]}

Chen, Guan-Fu ^{[2
]}

Chen, Bo-Wei ^{[3
]}

Hung, Yu-Ju ^{[3
]}

Chang, Kuo-Jui ^{[4
]}

Cheng, Kai-Chung ^{[4
]}

Huang, Chen-Shuo ^{[4
]}

Chen, Kuo-Kuang ^{[4
]}

Lu, Hsueh-Hsing ^{[4
]}

Lin, Yu-Hsin ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

[4] AU Optron Corp, New Display Proc Res Div, Hsinchu 300, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 31期

关键词：

indium-gallium-zinc-oxide (IGZO); thin film transistors (TFTs); negative bias illumination stress (NBIS); oxygen vacancies (Vo); metal oxide; anneal; reliability; X-ray photoelectron spectroscopy (XPS); HIGH-MOBILITY;

D O I：

10.1021/acsami.7b16307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional longterm annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

引用

收藏

页码：25866 / 25870

页数：5

相关论文

共 18 条

[1] Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays [J].

Chen, Charlene ;

Abe, Katsumi ;

Fung, Tze-Ching ;

Kumomi, Hideya ;

Kanicki, Jerzy .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)

[2] Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor [J].

Chen, Te-Chih ;

Chang, Ting-Chang ;

Hsieh, Tien-Yu ;

Lu, Wei-Siang ;

Jian, Fu-Yen ;

Tsai, Chih-Tsung ;

Huang, Sheng-Yao ;

Lin, Chia-Sheng .

APPLIED PHYSICS LETTERS, 2011, 99 (02)

[3] Oxygen vacancies promoting photoelectrochemical performance of In2O3 nanocubes [J].

Gan, Jiayong ;

Lu, Xihong ;

Wu, Jingheng ;

Xie, Shilei ;

Zhai, Teng ;

Yu, Minghao ;

Zhang, Zishou ;

Mao, Yanchao ;

Wang, Shing Chi Ian ;

Shen, Yong ;

Tong, Yexiang .

SCIENTIFIC REPORTS, 2013, 3

[4] Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors [J].

Ji, Kwang Hwan ;

Kim, Ji-In ;

Jung, Hong Yoon ;

Park, Se Yeob ;

Choi, Rino ;

Kim, Un Ki ;

Hwang, Cheol Seong ;

Lee, Daeseok ;

Hwang, Hyungsang ;

Jeong, Jae Kyeong .

APPLIED PHYSICS LETTERS, 2011, 98 (10)

[5] Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

JOURNAL OF DISPLAY TECHNOLOGY, 2009, 5 (07) :273-288

[6] Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films [J].

Kim, Yong-Hoon ;

Heo, Jae-Sang ;

Kim, Tae-Hyeong ;

Park, Sungjun ;

Yoon, Myung-Han ;

Kim, Jiwan ;

Oh, Min Suk ;

Yi, Gi-Ra ;

Noh, Yong-Young ;

Park, Sung Kyu .

NATURE, 2012, 489 (7414) :128-U191

[7] Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display [J].

Kwon, Jang Yeon ;

Son, Kyoung Seok ;

Jung, Ji Sim ;

Kim, Tae Sang ;

Ryu, Myung Kwan ;

Park, Kyung Bae ;

Yoo, Byung Wook ;

Kim, Jung Woo ;

Lee, Young Gu ;

Park, Kee Chan ;

Lee, Sang Yoon ;

Kim, Jong Min .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (12) :1309-1311

[8] Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation [J].

Lee, Sunghwan ;

Paine, David C. .

APPLIED PHYSICS LETTERS, 2013, 102 (05)

[9] Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In-Ga-Zn-O thin-film transistors [J].

Liao, Po-Yung ;

Chang, Ting-Chang ;

Su, Wan-Ching ;

Chen, Yu-Jia ;

Chen, Bo-Wei ;

Hsieh, Tien-Yu ;

Yang, Chung-Yi ;

Huang, Yen-Yu ;

Chang, Hsi-Ming ;

Chiang, Shin-Chuan .

APPLIED PHYSICS EXPRESS, 2016, 9 (12)

[10] Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors [J].

Noh, Hyeon-Kyun ;

Chang, K. J. ;

Ryu, Byungki ;

Lee, Woo-Jin .

PHYSICAL REVIEW B, 2011, 84 (11)