A new X band 180° high performance phase shifter using (Ba,Sr)TiO3 thin films

被引：0

作者：

Acikel, B ^{[1
]}

Taylor, TR ^{[1
]}

Hansen, PJ ^{[1
]}

Speck, JS ^{[1
]}

York, RA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new device topology has been proposed to implement parallel plate capacitors using BaSrTiO3 (BST) thin films for microwave applications. The new device design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-Band 1800 phase shifter has been implemented using new device layout. The circuit provided 240degrees-phase shift with an insertion loss of only 3 dB at 10GHz at room temperature. We have shown a figure of merit 93degrees/dB at 6.3 GHz and 87degrees/dB at 8.5 GHz. To our knowledge, these are the state of the art results for distributed phase shifters implemented using parallel plate or interdigital capacitors at room temperature.

引用

页码：1467 / 1469

页数：3

共 6 条

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