1200 V 14 mΩ SiC MOSFET with Low Specific On-Resistance of 3.3 mΩ cm2

被引：0
|
作者：
Zhang, Yuan-Lan [1 ,2 ]
Shi, Wen-Hua [3 ]
Lei, Guang-Yin [1 ,2 ]
Zhang, Qingchun Jon [1 ,2 ]
机构：
[1] Fudan Univ, Acad Engn & Technol, 220 Handan Rd, Shanghai 200433, Peoples R China
[2] Fudan Univ Ningbo, Res Inst, 901-C1,Binhai 2nd Rd, Ningbo 315336, Zhejiang, Peoples R China
[3] SiChain Semicond Ningbo Co Ltd, Bldg 42,136 Yuhaidong Rd, Ningbo 315000, Zhejiang, Peoples R China
来源：
2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS | 2022年
关键词：
D O I：
10.1109/SSLChinaIFWS57942.2023.10071073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Benefitted from the high switching frequency, knee-free driving voltage, and a natural reverse recovery body diode, SiC MOSFETs are regarded as the most potential candidate to take place of Si IGBT in 600V-3300V power applications. Pursuing lower specific on-resistance (R-sp,R-on) at certain rated voltages is the critical aim for more advanced devices with smaller size and higher efficiency. Here, we represent a successful design and fabrication of 1200V/14m Omega 4H-SiC MOSFET with ultra-low specific on-resistances of 3.3 m Omega cm(2) at 25 degrees C and 6.4 m Omega cm(2) at 150 degrees C, showing a desired positive resistance temperature coefficient. A detailed analysis has been made with respect to the static and dynamic characteristics, third quadrant conduction, and body diode, etc.
引用
收藏
页码：43 / 46
页数：4
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