STRUCTURAL AND ELECTRONIC PROPERTIES OF PENTACENE/PENTACENEQUINONE THIN FILMS PREPARED BY LANGMUIR-BLODGETT TECHNIQUE

被引：0

作者：

Weis, Martin ^{[2
]}

Gmucova, Katarina ^{[1
]}

Hasko, Daniel ^{[3
]}

Muellerova, Jarmila ^{[4
]}

机构：

[1] Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia

[2] Slovak Tech Univ, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia

[3] Slovak Tech Univ, Ctr Int Laser, SK-81219 Bratislava, Slovakia

[4] Univ Zilina, Fac Elect Engn, Dept Engn Fundamentals, SK-03101 Liptovsky Mikulas, Slovakia

来源：

COLLECTION OF CZECHOSLOVAK CHEMICAL COMMUNICATIONS | 2009年 / 74卷 / 04期

关键词：

Pentacene; Monolayers; Thin films; Langmuir-Blodgett technique; Electrochemistry; X-ray diffraction; Atomic force microscopy; FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING-DIODES; SOLAR-CELLS; PENTACENE; PERFORMANCE; TRANSPORT; GROWTH;

D O I：

10.1135/cccc2008210

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Structural and electronic properties of pentacene/pentacenequinone thin films prepared on various solid-state substrates by the Langmuir-Blodgett technique are reported. Amorphous structure of the prepared films has been proved by XRD measurements. Oxygen-related defects have been identified in the Langmuir-Blodgett films as a consequence of the exposure of pentacene Langmuir layer to air. Crystallization induced by thermal treatment of the prepared amorphous thin films has been observed. Electronic properties of pentacene/pentacenequinone Langmuir-Blodgett films have been investigated in the contact-less architecture using electrochemical techniques. The energy band diagram of the amorphous pentacene/pentacenequinone Langmuir-Blodgett film on a metallic surface was constructed from the obtained electrochemical data.

引用

页码：565 / 579

页数：15

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