Plasma enhanced chemical vapor deposition of ZnO thin films

Zinc oxide thin films were deposited on silicon and corning-7059 glass substrates by plasma enhanced chemical vapor deposition at different substrate temperatures ranging from 36 to 400 degrees C and with different gas flow rates. Diethylzinc as the source precursor, H2O as oxidizer and argon as carrier gas were used for the preparation of ZnO films. Structural and optical properties of these films were investigated using X-ray diffraction, reflection high energy electron diffraction, atomic force microscopy and photoluminescence. Highly oriented films with (002) preferred planes were obtained on silicon kept at 300 degrees C with 50 ml/min flow rate of diethylzinc without any post annealing. Reflection high energy electron diffraction pattern also showed the crystalline nature of these films. A textured surface with rms roughness similar to 28 nm was observed by atomic force microscopy for the films deposited at 300 degrees C. A sharp peak at 380 nm in the PL spectra indicated the UV band-edge emission. (c) 2006 Elsevier B.V. All rights reserved.