Giant sputtering rates from SiO (SiO2) irradiated by carbon clusters

被引:16
作者
Chaumont, J
Bernas, H
Kusnetsov, A
Clerc, C
Dumoulin, L
机构
[1] CTR SPECTROMETRIE NUCL & SPECTROMETRIE MASSE,CNRS,IN2P3,F-91405 ORSAY,FRANCE
[2] RUSSIAN ACAD SCI,INST MICROELECT TECHNOL,CHERNOGOLOVKA 142432,RUSSIA
关键词
clusters; ion beam energy deposition; sputtering;
D O I
10.1016/S0168-583X(97)00350-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The irradiation of SiO and SiO2 insulator layers with 0.5-3.2 MeV C-n(+)(n = 1...10) clusters leads to large erosion coefficients. The nuclear stopping component in these experiments is typically less than 5% of the total, and all observed effects are presumably due to the large electronic stopping energy density deposition upon cluster break-up. The sputtering yield can reach two hundred molecules per carbon cluster, i.e. two orders of magnitude higher than those obtained with single ion irradiations at the same energy per atom. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:436 / 438
页数:3
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