Growth and EPR properties of HoVO4 single crystals

被引：4
作者：
Leniec, G. [1 ]
Kaczmarek, S. M. [1 ]
Berkowski, M. [2 ]
Glowacki, M. [2 ]
Skibinski, T. [1 ]
Suchocki, A. [2 ,3 ]
Zhydachevskii, Y. A. [2 ]
机构：
[1] West Pomeranian Univ Technol, Inst Phys, Dept Mech Engn & Mechatron, PL-70310 Szczecin, Poland
[2] Polish Acad Sci, Inst Phys, PL-00908 Warsaw, Poland
[3] Kazimierz Wielki Univ, Inst Phys, PL-85072 Bydgoszcz, Poland
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷
关键词：
Crystal structure; Czochralski method; Single crystal growth; Vanadates; Magneto-optics materials; Solid state lasers; SPECTROSCOPY; SPECIATION; IONS;
D O I：
10.1016/j.jcrysgro.2014.01.038
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
HoVO4 single crystals were grown by the Czochralski method. The crystals were transparent. EPR spectra of the well oriented crystals were recorded as a function of the applied magnetic held. Besides Ho3+, V4+ ions were detected. EPR-NMR program was applied to find spin Hamiltonian parameters of Ho3+ ions. Absorption, excitation and photoluminescence spectra were measured, revealing the presence of electronic transitions characteristic for Ho3+ ions. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：177 / 180
页数：4
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