A Low-Current Digitally Predistorted Direct-Conversion Transmitter With 25% Duty-Cycle Passive Mixer

被引:10
作者
Collados, Manel [1 ]
Zhang, HongLi [2 ]
Tenbroek, Bernard [1 ]
Chang, Hsiang-Hui [3 ]
机构
[1] MTK Wireless Ltd, W Malling ME19 4AD, England
[2] MediaTek Singapore Pte Ltd, Singapore 138628, Singapore
[3] MediaTek Inc, Hsinchu 30078, Taiwan
关键词
CMOS; digital; driver; harmonic; linearity; longterm evolution (LTE); mixer; modulator; nonlinear; passive; predistortion; transmitter (TX); WCDMA; POWER;
D O I
10.1109/TMTT.2014.2309559
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-current direct-conversion transmitter (TX) is obtained by combining an efficient single-balanced 25% duty-cycle passive mixer with a low-bias single-ended driver. The nonlinearity of such architecture is aggravated by strong harmonics at the mixer output folding down to the fundamental frequency due to driver nonlinearity. To address this, a baseband mathematical model of the passive mixer plus nonlinear driver is derived. Then, based on this model, a novel digital-predistortion approach is disclosed. Implemented in 40-nm CMOS, the modulator and driver combined consume 45 mW when delivering a +3-dBm Release 99 WCDMA signal with 0.9% error vector magnitude (EVM) and -59-dBc adjacent-channel leakage power ratio (ACLR). In long-term evolution (LTE) mode, the TX delivers +0-dBm 10-MHz LTE 16QAM with -53-dBc ACLR and 1.2% EVM.
引用
收藏
页码:726 / 731
页数:6
相关论文
共 14 条
[11]   Orthogonal polynomials for power amplifier modeling and predistorter design [J].
Raich, R ;
Qian, H ;
Zhou, GT .
IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, 2004, 53 (05) :1468-1479
[12]   On the modeling of memory nonlinear effects of power amplifiers for communication applications [J].
Raich, R ;
Zhou, GT .
PROCEEDINGS OF THE 2002 IEEE 10TH DIGITAL SIGNAL PROCESSING WORKSHOP & 2ND SIGNAL PROCESSING EDUCATION WORKSHOP, 2002, :7-10
[13]  
Rossi P, 2013, ISSCC DIG TECH PAP I, V56, P340, DOI 10.1109/ISSCC.2013.6487761
[14]  
Youssef M., 2011, 2011 IEEE International Solid-State Circuits Conference (ISSCC 2011), P378, DOI 10.1109/ISSCC.2011.5746362