High perpendicular magnetic anisotropy in D022-Mn3+xGe tetragonal Heusler alloy films

被引：53

作者：

Sugihara, A. ^{[1
]}

Mizukami, S. ^{[1
]}

Yamada, Y. ^{[2
]}

Koike, K. ^{[2
]}

Miyazaki, T. ^{[1
]}

机构：

[1] Tohoku Univ, WPI, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Hokkaido Univ, Grad Sch Sci, Dept Condensed Matter Phys, Sapporo, Hokkaido 0600810, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 13期

关键词：

Epitaxial growth - Magnetic anisotropy - Magnesia - Thin films - Film preparation - Substrates;

D O I：

10.1063/1.4870625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared D0(22)-Mn3+xGe (-0.67 <= x <= 0.35) epitaxial thin films on MgO(001) substrates with Cr(001) buffer layers and systematically investigated the dependence of their perpendicular magnetic anisotropy constant, saturation magnetization, coercivity, and tetragonal axial ratio (c/a) on their composition and substrate temperature. Single-phase D0(22) crystal structures were formed in films with compositions of 0 <= x <= 0.35, prepared at 400 degrees C. The D0(22)-Mn3Ge films exhibited perpendicular magnetization with a magnetic squareness close to unity. Performing magnetic torque measurements at an applied field of 140 kOe, we estimated a perpendicular magnetic anisotropy constant of 11.8 +/- 0.5 Merg/cm(3), the highest and the most reliable value yet reported. (C) 2014 AIP Publishing LLC.

引用

页数：4

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