Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

被引：9

作者：

Kalsoom, Umber ^{[1
]}

Rafique, M. Shahid ^{[1
]}

Shahzadi, Shamaila ^{[1
]}

Fatima, Khizra ^{[1
]}

Shaheen, Rabia ^{[1
]}

机构：

[1] Univ Engn & Technol, Dept Phys, Lahore 54890, Pakistan

来源：

MATERIALS SCIENCE-POLAND | 2017年 / 35卷 / 04期

关键词：

graphene; Raman spectroscopy; atomic force microscopy; pulsed laser deposition; PULSED-LASER DEPOSITION; SOLID CARBON SOURCE; RAMAN-SPECTROSCOPY; CRYSTALLIZATION; SUBSTRATE; GRAPHITE; TEMPERATURE; SURFACES; METALS; FILMS;

D O I：

10.1515/msp-2017-0099

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The objective of the present research work is to optimize the growth conditions of bi-tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 degrees C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the ARM micrographs of the films also confirmed the formation of bi-tri-and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bi-tri- or few-layer graphene using pulsed laser deposition technique.

引用

页码：687 / 693

页数：7

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