Interaction of InAs and InSb with aqueous solutions of nitric acid

被引：0

作者：

Tomashik, ZF ^{[1
]}

Danilenko, SG ^{[1
]}

Tomashik, VN ^{[1
]}

Kusyak, NV ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

INORGANIC MATERIALS | 2000年 / 36卷 / 02期

关键词：

Arsenic; Nitric Acid; Dissolution Rate; InSb; Dissolution Kinetic;

D O I：

10.1007/BF02758005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InSb dissolution in 7.8-15.6 NHNO3 is controlled by the oxidizer diffusion to the surface. InAs dissolution in 15.6 NHNO3 is controlled by diffusion in solution; at low acid concentrations, the dissolution rate is limited by diffusion through the loose oxide layer forming on the sample surface. The different dissolution kinetics of InAs and InSb in HNO3 can be explained by the different properties of the surface layers of hydrous arsenic and antimony oxides.

引用

页码：105 / 107

页数：3

共 9 条

[1] Luft B.D., 1982, FIZIKO KHIMICHESKIE
[2] MYULLER RL, 1959, VESTN LENINGRAD U 4, P106
[3] MYULLER YR, 1961, ZH OBSHCH KHIM, V31, P2457
[4] Orlova G.M., 1981, ZH PRIKL KHIM, V54, P1960
[5] PEREVOSHCHIKOV VA, 1995, HIGH-PURITY SUBST, P5
[6] SANGWAL K, 1987, ETCHING CRYSTALS
[7] Sava A.A., 1987, IAN SSSR NEORG MATER, V23, P1639
[8] CHEMICAL POLISHING OF SEMICONDUCTORS
TUCK, B
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (02) : 321 - 339
[9] VOZMILOVA LN, 1970, ARSENID GALLIYA, P210

← 1 →