A Si 1.8 GHz RLC filter with tunable center frequency and quality factor

被引：74
作者：
Pipilos, S
Tsividis, YP
Fenk, J
Papananos, Y
机构：
[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
[2] SIEMENS AG,SEMICOND DIV,D-81541 MUNICH,GERMANY
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 10期
关键词：
D O I：
10.1109/4.540064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A second-order active bandpass filter using integrated inductors was implemented in Si bipolar technology. The filter uses special techniques to make the quality factor and the center frequency tunable. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has 1 dB compression dynamic range of 40 dB, and draws 8.7 mA from a 2.8 V supply.
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收藏
页码：1517 / 1525
页数：9
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