Tribological attributes of post-CMP brush scrubbing

被引:25
|
作者
Philipossian, A [1 ]
Mustapha, L [1 ]
机构
[1] Univ Arizona, Dept Environm Chem & Engn, Tucson, AZ 85721 USA
关键词
D O I
10.1149/1.1753586
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Tribological attributes of post-chemical mechanical planarization (CMP) brush scrubbing are investigated as a function of tool kinematics, applied pressure, pH, and flow rate of the cleaning solution. Coefficient of friction (COF) results show that at high pressures, for low and neutral pH, the lubrication mechanism is that of "partial lubrication," while "hydrodynamic lubrication" is observed at low pressures. The existence of hydrodynamic lubrication corresponding to lower of COF values continues at high values of pH irrespective of brush pressure. Furthermore, flow rate does not impact the overall tribology of the system. The effect of solution pH on COF is explained by considering the effect of pH on the solubility and gellation characteristics of silica in the silica-water system. At pH values below 2.0, silicic acid monomers are believed to collide and aggregate into chains and three-dimensional networks representative of gelling, thus resulting in high COF values. The lower COF at pH 7.0 is believed to be due to the presence of network-terminated silanol groups and the absence of gels. At pH values above 10.5, surface silanol groups completely dissociate, causing the hydrated silica surface to dissolve as soluble silicates, thus lowering the frictional forces. (C) 2004 The Electrochemical Society.
引用
收藏
页码:G456 / G460
页数:5
相关论文
共 50 条
  • [1] Tribological characterization of post-CMP brush scrubbing
    Philipossian, A
    Mustapha, L
    ULTRA CLEAN PROCESSING OF SILICON SURFACES V, 2003, 92 : 275 - 280
  • [2] MECHANICAL BRUSH SCRUBBING FOR POST-CMP CLEAN
    KRUSELL, WC
    DELARIOS, JM
    ZHANG, J
    SOLID STATE TECHNOLOGY, 1995, 38 (06) : 109 - &
  • [3] A novel design of brush scrubbing in post-CMP cleaning
    Qi, Zuqiang
    Lu, Wanjia
    Lee, Weiming
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2014, 85 : 30 - 35
  • [4] Effect of mechanical properties of PVA brush rollers on frictional forces during post-CMP scrubbing
    Philipossian, A
    Mustapha, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (09) : G632 - G637
  • [5] Communication-An Analysis of Shear Forces in Post-CMP PVA Brush Scrubbing for Stationary and Rotating Wafers
    Sampurno, Y.
    Linhart, A. N.
    Wortman-Otto, K. M.
    Philipossian, A.
    Keleher, J. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (03)
  • [6] Modeling of particle removal using non-contact brush scrubbing in post-CMP cleaning processes
    Chein, Reiyu
    Liao, Wenyuan
    Journal of Adhesion, 2006, 82 (06): : 555 - 575
  • [7] Electrochemistry of copper post-CMP cleaning examined in combination with brush-scrubbing in a malonic acid solution
    Santefort, D. R.
    Roy, D.
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2024, 953
  • [8] Modeling of particle removal using non-contact brush scrubbing in post-CMP cleaning processes
    Chein, Reiyu
    Liao, Wenyuan
    JOURNAL OF ADHESION, 2006, 82 (06): : 555 - 575
  • [9] Effect of tool kinematics, brush pressure and cleaning fluid pH on coefficient of friction and tribology of post-CMP PVA brush scrubbing processes
    Philipossian, A
    Mustapha, L
    CHEMICAL-MECHANICAL PLANARIZATION, 2003, 767 : 209 - 215
  • [10] An Advanced Fault Detection Method for Post-CMP Brush Scrubbers
    Hamaguchi, Yohei
    Aoyama, Shin
    Tayama, Tetsuya
    Miyatake, Tsuyoshi
    Kawaguchi, Hidehiko
    2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM), 2018,