An investigation into second harmonic generation by Si-rich SiNx thin films deposited by RF sputtering over a wide range of Si concentrations

被引：35

作者：

Kitao, Akihiro ^{[1
]}

Imakita, Kenji ^{[1
]}

Kawamura, Ibuki ^{[1
]}

Fujii, Minoru ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2014年 / 47卷 / 21期

关键词：

second harmonic generation; silicon nitride; CMOS comaptible; SILICON-NITRIDE; OPTICAL-PROPERTIES; NONLINEARITY;

D O I：

10.1088/0022-3727/47/21/215101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The second-order nonlinearity of Si-rich SiNx thin films prepared by RF sputtering was investigated. It was found that the second-order nonlinear coefficient (d(eff)) increases with increasing Si concentration in a wide range of Si concentrations. The observed maximum value of d(eff) was 5.9 pmV(-1), which is twice that of the beta-BaB2O4 crystal. X-ray photoelectron spectroscopy analysis in the Si 2p energy region revealed that the films consist of Si species with different valence states. Strong correlation was observed between the d(eff) values and the XPS peak intensity of Si-0 species, suggesting that Si clusters are the most probable origin of the large second-order nonlinearity.

引用

页数：8

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