Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

被引：4
|
作者：
Lee, N. J. [1 ]
Kang, T. S. [1 ]
Hu, Q. [1 ]
Lee, T. S. [1 ]
Yoon, T-S [2 ]
Lee, H. H. [3 ]
Yoo, E. J. [4 ]
Choi, Y. J. [4 ]
Kang, C. J. [1 ]
机构：
[1] Myongji Univ, Dept Phys, Gyeonggi Do 17058, South Korea
[2] Myongji Univ, Dept Mat Sci & Engn, Gyeonggi Do 17058, South Korea
[3] Myongji Univ, Dept Chem Engn, Gyeonggi Do 17058, South Korea
[4] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
tri-state resistive switching; tantalum oxide; manganese oxide; RRAM; BILAYER STRUCTURE; 2-STEP RESET; PERFORMANCE; BEHAVIORS;
D O I：
10.1088/1361-6463/aabb77
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current-voltage (I-V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole-Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I-V characteristics and TEM images.
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页数：7
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