Photoluminescence observation from zinc oxide formed by magnetron sputtering at room temperature

被引：4

作者：

Kudryashov, D. ^{[1
]}

Babichev, A. ^{[1
,2
]}

Nikitina, E. ^{[1
]}

Gudovskikh, A. ^{[1
]}

Kladko, P. ^{[3
]}

机构：

[1] St Petersburg Acad Univ RAS, St Petersburg 194021, Russia

[2] ITMO Univ, St Petersburg 197101, Russia

[3] Connector Opt LLC, St Petersburg 194292, Russia

来源：

2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015) | 2015年 / 643卷

关键词：

D O I：

10.1088/1742-6596/643/1/012013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photoluminescence (PL) of ZnO thin films grown by magnetron sputtering at room temperature has been observed. The PL spectra were measured using an instrument from Accent Optical Technologies with a solid state UV laser (lambda = 266 nm) as the pumping source and at the temperature of 300 K. Samples grown at sputtering power of 100-200 W show a strong photoluminescence (PL) at wavelength of 377 nm and its intensity shows non-linear dependence with magnetron power. At values of sputtering power less then 100 W PL signal was not observed. A correlation between PL, XRD intensity and ZnO grain size was shown.

引用

页数：4

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