New Applications in Power Electronics Based on SiC Power Devices

被引：6

作者：

Morel, Herve ^{[1
]}

Bergogne, Dominique ^{[1
]}

Planson, Dominique ^{[1
]}

Allard, Bruno ^{[1
]}

Meuret, Regis ^{[2
]}

机构：

[1] INSA Lyon, AMPERE Lab, Bat Leonard de Vinci, F-69621 Villeurbanne, France

[2] Hispano Suiza, SAFRAN Grp, BP 42, F-77551 Moissy Cramaye, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

SiC devices; JFET; Power Electronics; High Temperature; High Voltage;

D O I：

10.4028/www.scientific.net/MSF.600-603.925

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlled switch devices are now available in silicon carbide. So new applications are possible. The SiC-JFET enables to develop high temperature inverters for the More Electric Aircraft for instance. The diode-less SiC-JFET inverter is a potentially nice solution, but specific drivers, passive components and packaging have to be developed. Besides high voltage applications need high voltage devices. In this case design rules have to be adapted to the extended short-circuit and breakdown voltage capabilities of SiC devices.

引用

页码：925 / +

页数：2

共 9 条

[1]

BERGOGNE D, 2005, EPE 05

[2] Three-phase ac buck rectifier using normally-on SiC JFETs at 150 kHz switching frequency [J].

Cass, Callaway J. ;

Burgos, Rolando ;

Wang, Fred ;

Boroyevich, Dushan .

2007 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, 2007, :2162-2167

[3]

CHANG HR, 2003, IEEE POW EL SPEC C A, V1, P201

[4]

CHOW P, 2007, ECPE 2 SIC USER FORU

[5] Power conversion with SiC devices at extremely high ambient temperatures [J].

Funaki, Tsuyoshi ;

Balda, Juan Carlos ;

Junghans, Jeremy ;

Kashyap, Avinash S. ;

Mantooth, H. Alan ;

Barlow, Fred ;

Kimoto, Tsunenobu ;

Hikihara, Takashi .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007, 22 (04) :1321-1329

[6]

HUDGINS JL, 2003, IEEE T POW ELEC, V18

[7] A review of the techniques used for modeling single-event effects in power MOSFET's [J].

Johnson, GH ;

Palau, JM ;

Dachs, C ;

Galloway, KF ;

Schrimpf, RD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) :546-560

[8]

MITLENER H, 1999, POWER SEMICONDUCTOR

[9]

Wang J, 2007, IEEE POWER ELECTRON, P72

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