13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

被引：6

作者：

Okamoto, Dai ^{[1
]}

Tanaka, Yasunori ^{[1
]}

Mizushima, Tomonori ^{[1
]}

Yoshikawa, Mitsuru ^{[1
]}

Fujisawa, Hiroyuki ^{[1
]}

Takenaka, Kensuke ^{[1
]}

Harada, Shinsuke ^{[1
]}

Ogata, Shuji ^{[2
]}

Hayashi, Toshihiko ^{[2
]}

Izumi, Toru ^{[2
]}

Hemmi, Tetsuro ^{[2
]}

Tanaka, Atsushi ^{[2
]}

Nakayama, Koji ^{[2
]}

Asano, Katsunori ^{[2
]}

Matsumoto, Kazushi ^{[1
]}

Ohse, Naoyuki ^{[1
,3
]}

Ryo, Mina ^{[1
,3
]}

Ota, Chiharu ^{[4
]}

Takao, Kazuto ^{[4
]}

Mizukami, Makoto ^{[4
]}

Kato, Tomohisa ^{[1
]}

Takei, Manabu ^{[1
,3
]}

Yonezawa, Yoshiyuki ^{[1
]}

Fukuda, Kenji ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki, Japan

[2] Kansai Elect Power Co Inc, Amagasaki, Hyogo, Japan

[3] Fuji Elect Co Ltd, Hino, Tokyo, Japan

[4] Toshiba Co Ltd, Corporat Res & Dev Ctr, Kawasaki, Kanagawa, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

基金：

日本学术振兴会;

关键词：

PiN diode; high voltage; large-area device; forward voltage drop;

D O I：

10.4028/www.scientific.net/MSF.778-780.855

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We successfully fabricated 13-kV, 20-A, 8 mm x 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9-5.3 V, and an on-resistance (R(on)A(active)) of 12 m Omega.cm(2) at 100 A/cm(2). The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using the Candela wafer inspection system and light-emission microscope and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.

引用

页码：855 / +

页数：2

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