Random deposition as a growth mode in atomic layer deposition

被引:59
作者
Puurunen, RL
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, INSYS, B-3001 Louvain, Belgium
关键词
ALD; growth per cycle; model; random deposition;
D O I
10.1002/cvde.200306283
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Despite the increasing number of successful applications of material growth by atomic layer deposition (ALD), the description of many physicochemical processes that occur during ALD growth is still incomplete. The way the material is arranged on the surface during ALD growth, called the ALD growth mode, defines important material properties, such as when the substrate gets fully covered by the ALD-grown material, and the surface roughness. This work initiates the theoretical description of ALD growth modes by describing the random deposition growth mode, both qualitatively and quantitatively, by using, the growth per cycle as a statistical quantity.
引用
收藏
页码:159 / 170
页数:12
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