Effect of nitrogen ion impingement during molecular beam epitaxy growth of GaAs as a function of acceleration energy

被引：0
|
作者：
Fukuzawa, Y
Shima, T
Sanpei, H
Makita, Y
Kimura, S
Nakamura, Y
机构：
[1] Electrotech Lab, Div Optoelect, Tsukuba, Ibaraki 3058568, Japan
[2] Nippon Inst Technol, Minamisaitama 3458501, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 71卷
关键词：
nitrogen doped GaAs; isoelectronic impurity; ion acceleration energy; CIBMBE; furnace-annealing; Raman scattering; photoluminescence;
D O I：
10.1016/S0921-5107(99)00373-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen ions were impinged during the molecular beam epitaxial growth of GaAs at 550 degrees C varying its acceleration energy in the range from 100 eV to 10 keV. No photoluminescence (PL) emissions were observed in as-grown condition when ion acceleration energy becomes higher than 500 eV. After high-temperature annealing at 750 degrees C, structural defects were removed and incorporated nitrogen atoms became optically active. PL emissions that relate to isoelectronic impurity and dilute GaAsN alloys were observed with an ion acceleration energy of 10 keV. (C) 2000 Elsevier Science S.A. All rights reserved.
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页码：192 / 195
页数：4
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