Ultraviolet and Long-lived Blue Luminescence of Oxidized Porous Silicon

被引:0
作者
Gelloz, B. [1 ]
Mentek, R. [2 ]
Koshida, N. [2 ]
机构
[1] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 464, Japan
[2] Tokyo Univ Agr & Technol, Dept Elect & Elect Engn, Koganei, Tokyo, Japan
来源
NANOCRYSTAL EMBEDDED DIELECTRICS FOR ELECTRONIC AND PHOTONIC DEVICES | 2013年 / 53卷 / 04期
基金
日本学术振兴会;
关键词
PHOTOLUMINESCENCE; PHOSPHORESCENCE; OXYGEN;
D O I
10.1149/05304.0103ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Heavily oxidized porous silicon exhibits a strong blue light emission band including a long-lived phosphorescence component, particularly strong below 200 K, and which was modeled as the result of recombinations from triplet states to ground levels. Its origin is related to molecular species in the silicon/silicon oxide nanostructure. A new emission band, in the ultraviolet (UV) region, has been identified in this material. This UV band is associated to a very narrow absorption band, with a very small Stokes shift. The energy levels involved in its emission mechanism are correlated to those involved in the excitation of the blue emission. Moreover, the effect of exposure to water, pentane and ethanol on the luminescence was studied. The blue band was partially quenched, whereas the UV band was dramatically enhanced by exposure to ethanol. This phenomenon was attributed to a rise in the number of hydroxyl groups after ethanol exposure.
引用
收藏
页码:103 / 111
页数:9
相关论文
共 15 条
[1]   Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].
Bisi, O ;
Ossicini, S ;
Pavesi, L .
SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126
[2]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[3]   Conformational heterogeneity of the point defects in silica: The lifetime of the phosphorescence band at 2.7 eV [J].
D'Amico, Michele ;
Leone, Maurizio .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (2-9) :239-243
[4]   Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing [J].
Gelloz, B ;
Kojima, A ;
Koshida, N .
APPLIED PHYSICS LETTERS, 2005, 87 (03)
[5]   Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing [J].
Gelloz, B. ;
Shibata, T. ;
Koshida, N. .
APPLIED PHYSICS LETTERS, 2006, 89 (19)
[6]   Mechanism of a remarkable enhancement in the light emission from nanocrystalline porous silicon annealed in high-pressure water vapor [J].
Gelloz, B ;
Koshida, N .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)
[7]   Blue Phosphorescence in Oxidized Nano-Porous Silicon [J].
Gelloz, B. ;
Koshida, N. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012, 1 (06) :R158-R162
[8]  
Gelloz B., 2010, APPL PHYS LETT, V97
[9]   Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon [J].
Gelloz, Bernard ;
Koshida, Nobuyoshi .
APPLIED PHYSICS LETTERS, 2009, 94 (20)
[10]   Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High-Pressure Water Vapor Annealing [J].
Gelloz, Bernard ;
Mentek, Romain ;
Koshida, Nobuyoshi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)