N2-annealing effects on characteristics of Schottky-Barrier MOSFETS

被引：24

作者：

Jang, Moongyu ^{[1
]}

Kim, Yarkyeon

Jeon, Myungsim

Choi, Cheljong

Baek, Inbok

Lee, Seongjae

Park, Byoungchul

机构：

[1] Electron & Telecommun Res Inst, IT Fus Technol Res Div, Nano Bio Electron Devices Team, Taejon 305350, South Korea

[2] Chungnam Natl Univ, Dept Nanosci & Technol, Taejon 305764, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 08期

关键词：

drain-induced barrier thinning (DIBT); interface trap; SB-MOSFETs; scaling; Schottky diode; subthreshold swing (SS);

D O I：

10.1109/TED.2006.876575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N-2 annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 mu m to 23 nn. Also, N-2 annealing is applied to enhance the SB-MOSFETs' subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime.

引用

页码：1821 / 1825

页数：5

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