Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

被引：35

作者：

Ling, CC ^{[1
]}

Lui, MK ^{[1
]}

Ma, SK ^{[1
]}

Chen, XD ^{[1
]}

Fung, S ^{[1
]}

Beling, CD ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.1773934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at E-V+34 meV is found to be the important acceptor responsible for the p-type conduction of the samples. Two different kinds of V-Ga-related defects (lifetimes of 280 ps and 315 ps, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the E-V+34 meV level could not be related to the two V-Ga-related defects. (C) 2004 American Institute of Physics.

引用

页码：384 / 386

页数：3

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