Characterization of Carbon Nanotube Field Effect Transistor Using Simulation Approach

被引：6

作者：

Dass, Devi ^{[1
]}

Prasher, Rakesh ^{[1
]}

Vaid, Rakesh ^{[1
]}

机构：

[1] Univ Jammu, Dept Phys & Elect, Jammu 180006, Jammu & Kashmir, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

CNTFET; insulator thickness; high-k; CNT diameter;

D O I：

10.1007/978-3-319-03002-9_147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the size of the Si MOSFET approaches towards its limiting value, various short channel effects appear to affect its performance. Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronic devices that overcome those MOSFETs limitations. In this paper we have studied the effect of scaling carbon nanotube (CNT) diameter, insulator thickness and high-k dielectric materials on current-voltage characteristics of co-axial gated ballistic n-type CNTFET. The device metrics such as drive current (I-on), leakage current (I-off), I-on/I-off ratio, transconductance, subthreshold slope (S) and drain induced barrier lowering (DIBL) are also studied in this paper. The simulation results obtained are then compared with conventional nanoscale n-type MOSFET. It has been concluded that CNTFET seem to provide better performance than conventional nanoscale n-type MOSFET in term of high speed capability and lower switching power consumption.

引用

页码：585 / 588

页数：4

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