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Multiwall nanotubes with intramolecular junctions (CNx/C):: Preparation, rectification, logic gates, and application
被引:30
作者:

Hu, P
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Xiao, K
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Liu, YQ
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Yu, G
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Wang, XB
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Fu, L
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Cui, GL
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

Zhu, DB
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Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
机构:
[1] Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
关键词:
D O I:
10.1063/1.1760212
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We prepared a large quantity of multiwall nanotubes with intramolecular junctions (CNx/C) by pyrolysis of iron phthalocyanine with or without an inlet of ammonia gas. The nanotubes consist of two sections, one section made of carbon nitride featuring bamboo-like structure and the other one made of carbon featuring empty hollow cylinder structure, and thus the intramolecular junctions were formed in the middle as a result of being doped or undoped with nitrogen. Nanodiode based on a single CNx/C junction shows reproducible rectifying behavior with a rectification ratio of 1.3x10(3) at +/-2 V. In addition, the nanodiode demonstrated as a half-wave rectifier worked at an input sine wave of 1 kHz. Two CNx/C junctions were configured together to exhibit functions of OR and AND logic gates. Moreover, after substituting the wave-detection silicon diode in common transistor radio set with our nanodiode, the radio set still worked normally, representing an important step toward the potential application for nano-scale devices. (C) 2004 American Institute of Physics.
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页码:4932 / 4934
页数:3
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